Multicolor approach to DRAM STI active cut patterning

ABSTRACT

Apparatuses and methods to provide a patterned substrate are described. A plurality of patterned and spaced first lines and carbon material lines and formed on the substrate surface by selectively depositing and etching films extending in a first direction and films extending in a second direction that crosses the first direction to pattern the underlying structures.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. application Ser. No.16/527,915, filed on Jul. 31, 2019, which claims priority to U.S.Provisional Application No. 62/713,513, filed Aug. 1, 2018, and U.S.Provisional Application No. 62/731,273, filed Sep. 14, 2018 the entiredisclosures of which are hereby incorporated by reference herein.

TECHNICAL FIELD

Embodiments of the present disclosure pertain to the field of electronicdevice manufacturing, and in particular, to three-dimensional (3D)memory structures. More particularly, embodiments of the disclosure aredirected to methods for active cut self-aligned quadruple patterning(SAQP) applications.

BACKGROUND

Generally, an integrated circuit (IC) refers to a set of electronicdevices, e.g., transistors formed on a small chip of semiconductormaterial, typically, silicon. Typically, the IC includes one or morelayers of metallization having metal lines to connect the electronicdevices of the IC to one another and to external connections. Typically,layers of the interlayer dielectric material are placed between themetallization layers of the IC for insulation.

For current dynamic random access memory (DRAM) active-cut patterning(D1x, D1y node), cross self-aligned double patterning (X-SADP) orlithography-etch-lithography-etch (LELE) schemes are employed. However,integration of these schemes causes shallow trench isolation (STI)active island area (also called Active Area) to be reduced as thetechnology node advances. If the Active Area shrinks, it can causeburied wordline patterning and yield issues. Therefore, there is anongoing need in the art for methods of improving active cut areas.

SUMMARY

One or more embodiments of the disclosure are directed to methods offorming an electronic device. A substrate is provided for processing.The substrate comprises: a plurality of first lines extending along afirst direction, the first lines comprising a first spacer material, aplurality of second lines comprising a second spacer material extendingalong the first direction, the second lines arranged on either side ofthe plurality of first lines and having a trench between adjacent secondlines exposing a portion of the substrate. A conformal gapfill processis performed to fill the trench with carbon gapfill material to form acarbon line along the first direction and deposit an overburden carbonmaterial having an opening aligned with the carbon gapfill material inthe filled trench. A spin-on-carbon (SOC) layer is deposited on thecarbon material to fill the opening in the overburden carbon materialand cover the carbon gapfill material in the filled trench and theoverburden carbon material. The SOC layer and the overburden carbonmaterial are removed to expose a top surface of the first spacermaterial, the second spacer material and the carbon gapfill material.

Additional embodiments of the disclosure are directed to methods offorming an electronic device. A substrate comprising a plurality offirst lines extending along a first direction, a plurality of carbonmaterial lines extending along the first direction, each of the carbonmaterial lines separated from adjacent first lines by a second line, anoxide layer on the first lines, second lines and carbon material lines,and a plurality of third lines on the oxide layer, the third linesextending along a second direction different than the first directionand spaced to form trenches between adjacent third lines is provided. Aconformal gapfill process is performed to fill the trench betweenadjacent third lines with a fourth spacer material. Portions of thefourth spacer material are removed to provide a plurality of fourthlines of the fourth spacer material. Each of the fourth lines isadjacent to a third line so that each third line has a fourth line oneither side thereof, and form an opening exposing the oxide layer. Afirst cut etch process is performed to remove the oxide layer andportions of the first lines and carbon material lines under the oxidelayer, leaving the second lines.

Further embodiments of the disclosure are directed to processing toolsfor forming a semiconductor device. The processing tools comprise acentral transfer station with a plurality of processing chambersdisposed around the central transfer station. A robot is within thecentral transfer station and is configured to move a substrate betweenthe plurality of processing chambers. A first processing chamber isconnected to the central transfer station. The first processing chamberis configured to perform etch process. A second processing chamber isconnected to the central transfer station. The second processing chamberis configured to perform deposition processes. A controller is connectedto one or more of the central transfer station, the robot, the firstprocessing chamber, and/or the second processing chamber. The controllerhas one or more configurations selected from a first configuration tomove a substrate on the robot between the plurality of processingchambers, a second configuration to perform a conformal gapfill processin one or more of the processing chambers, a third configuration toperform one or more etch processes, a fourth configuration to perform achemical-mechanical planarization process, and a fifth configuration toperform a lithography process.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the presentdisclosure can be understood in detail, a more particular description ofthe disclosure, briefly summarized above, may be had by reference toembodiments, some of which are illustrated in the appended drawings. Itis to be noted, however, that the appended drawings illustrate onlytypical embodiments of this disclosure and are therefore not to beconsidered limiting of its scope, for the disclosure may admit to otherequally effective embodiments. The embodiments as described herein areillustrated by way of example and not limitation in the figures of theaccompanying drawings in which like references indicate similarelements.

FIG. 1A illustrates an isotropic view of an electronic device structureaccording to one embodiment;

FIG. 1B illustrates a front view of the electronic device structuredepicted in FIG. 1A;

FIG. 2A is a view similar to FIG. 1A, after a conformal spacerdeposition process according to one embodiment;

FIG. 2B illustrates a front view of the electronic device structuredepicted in FIG. 2A;

FIG. 3A is a view similar to FIG. 2A after a spacer etch processaccording to one embodiment;

FIG. 3B illustrates a front view of the electronic device structuredepicted in FIG. 3A;

FIG. 4A is a view similar to FIG. 3A after a mandrel pull-out processaccording to one embodiment;

FIG. 4B illustrates a front view of the electronic device structuredepicted in FIG. 4A;

FIG. 5A is a view similar to FIG. 4A after spacer on spacer depositionprocess according to one embodiment;

FIG. 5B illustrates a front view of the electronic device structuredepicted in FIG. 5A;

FIG. 6A is a view similar to FIG. 5A after a second spacer etch processaccording to one embodiment;

FIG. 6B illustrates a front view of the electronic device structuredepicted in FIG. 6A;

FIG. 7A is a view similar to FIG. 6A after a gapfill process accordingto one embodiment;

FIG. 7B illustrates a front view of the electronic device structuredepicted in FIG. 7A;

FIG. 8A is a view similar to FIG. 7A after a spin-on material depositionprocess according to one embodiment;

FIG. 8B illustrates a front view of the electronic device structuredepicted in FIG. 8A;

FIG. 9A is a view similar to FIG. 8A after an etchback process accordingto one embodiment;

FIG. 9B illustrates a front view of the electronic device structuredepicted in FIG. 9A;

FIG. 10A is a view similar to FIG. 9A after an oxide layer depositionprocess according to one embodiment;

FIG. 10B illustrates a front view of the electronic device structuredepicted in FIG. 10A;

FIG. 11A is a view similar to FIG. 10A after a nitride layer depositionprocess according to one embodiment;

FIG. 11B illustrates a front view of the electronic device structuredepicted in FIG. 11A;

FIG. 12A is a view similar to FIG. 11A rotated 90° after formation ofthird lines according to one embodiment;

FIG. 12B illustrates a front slice of the electronic device structuredepicted in FIG. 12A;

FIG. 12C illustrates a slice of the electronic device structure depictedin FIG. 12A taken in the y-z plane along line C-C;

FIG. 12D illustrates a slice of the electronic device structure depictedin FIG. 12A taken in the y-z plane along the line D-D;

FIG. 13A is a view similar to FIG. 12A after conformal spacer depositionaccording to one embodiment;

FIG. 13B illustrates a front slice of the electronic device structuredepicted in FIG. 13A;

FIG. 13C illustrates a slice of the electronic device structure depictedin FIG. 13A taken in the y-z plane along line C-C;

FIG. 13D illustrates a slice of the electronic device structure depictedin FIG. 13A taken in the y-z plane along the line D-D;

FIG. 14A is a view similar to FIG. 13A after a spacer etch processaccording to one embodiment;

FIG. 14B illustrates a front slice of the electronic device structuredepicted in FIG. 14A;

FIG. 14C illustrates a slice of the electronic device structure depictedin FIG. 14A taken in the y-z plane along line C-C;

FIG. 14D illustrates a slice of the electronic device structure depictedin FIG. 14A taken in the y-z plane along the line D-D;

FIG. 15A is a view similar to FIG. 14A after a first cut processaccording to one embodiment;

FIG. 15B illustrates a front slice of the electronic device structuredepicted in FIG. 15A;

FIG. 15C illustrates a slice of the electronic device structure depictedin FIG. 15A taken in the y-z plane along line C-C;

FIG. 15D illustrates a slice of the electronic device structure depictedin FIG. 15A taken in the y-z plane along the line D-D;

FIG. 16A is a view similar to FIG. 15A after a spin-on materialdeposition according to one embodiment;

FIG. 16B illustrates a front slice of the electronic device structuredepicted in FIG. 16A;

FIG. 16C illustrates a slice of the electronic device structure depictedin FIG. 16A taken in the y-z plane along line C-C;

FIG. 16D illustrates a slice of the electronic device structure depictedin FIG. 16A taken in the y-z plane along the line D-D;

FIG. 17A is a view similar to FIG. 16A after an etchback processaccording to one embodiment;

FIG. 17B illustrates a front slice of the electronic device structuredepicted in FIG. 17A;

FIG. 17C illustrates a slice of the electronic device structure depictedin FIG. 17A taken in the y-z plane along line C-C;

FIG. 17D illustrates a slice of the electronic device structure depictedin FIG. 17A taken in the y-z plane along the line D-D;

FIG. 18A is a view similar to FIG. 17A after a mandrel pull-out processaccording to one embodiment;

FIG. 18B illustrates a front slice of the electronic device structuredepicted in FIG. 18A;

FIG. 18C illustrates a slice of the electronic device structure depictedin FIG. 18A taken in the y-z plane along line C-C;

FIG. 18D illustrates a slice of the electronic device structure depictedin FIG. 18A taken in the y-z plane along the line D-D;

FIG. 19A is a view similar to FIG. 18A after an oxide etch processaccording to one embodiment;

FIG. 19B illustrates a front slice of the electronic device structuredepicted in FIG. 19A;

FIG. 19C illustrates a slice of the electronic device structure depictedin FIG. 19A taken in the y-z plane along line C-C;

FIG. 19D illustrates a slice of the electronic device structure depictedin FIG. 19A taken in the y-z plane along the line D-D;

FIG. 20A is a view similar to FIG. 19A after an etchback process toremove the fourth lines according to one embodiment;

FIG. 20B illustrates a front slice of the electronic device structuredepicted in FIG. 20A;

FIG. 20C illustrates a slice of the electronic device structure depictedin FIG. 20A taken in the y-z plane along line C-C;

FIG. 20D illustrates a slice of the electronic device structure depictedin FIG. 20A taken in the y-z plane along the line D-D;

FIG. 21A is a view similar to FIG. 20A after an ashing process accordingto one embodiment;

FIG. 21B illustrates a front slice of the electronic device structuredepicted in FIG. 21A;

FIG. 21C illustrates a slice of the electronic device structure depictedin FIG. 21A taken in the y-z plane along line C-C;

FIG. 21D illustrates a slice of the electronic device structure depictedin FIG. 21A taken in the y-z plane along the line D-D;

FIG. 22A is a view similar to FIG. 21A after an oxide removal process toform patterned lines on the substrate according to one embodiment;

FIG. 22B illustrates a front slice of the electronic device structuredepicted in FIG. 22A;

FIG. 22C illustrates a slice of the electronic device structure depictedin FIG. 22A taken in the y-z plane along line C-C;

FIG. 22D illustrates a slice of the electronic device structure depictedin FIG. 22A taken in the y-z plane along the line D-D; and

FIG. 23 illustrates a schematic representation of a processing tool foruse with one or more embodiment of the disclosure.

DETAILED DESCRIPTION

Before describing several exemplary embodiments of the disclosure, it isto be understood that the disclosure is not limited to the details ofconstruction or process steps set forth in the following description.The disclosure is capable of other embodiments and of being practiced orbeing carried out in various ways.

A “substrate” as used herein, refers to any substrate or materialsurface formed on a substrate upon which film processing is performedduring a fabrication process. For example, a substrate surface on whichprocessing can be performed include materials such as silicon, siliconoxide, strained silicon, silicon on insulator (SOI), carbon dopedsilicon oxides, amorphous silicon, doped silicon, germanium, galliumarsenide, glass, sapphire, and any other materials such as metals, metalnitrides, metal alloys, and other conductive materials, depending on theapplication. Substrates include, without limitation, semiconductorwafers. Substrates may be exposed to a pretreatment process to polish,etch, reduce, oxidize, hydroxylate, anneal and/or bake the substratesurface. In addition to film processing directly on the surface of thesubstrate itself, in the present disclosure, any of the film processingsteps disclosed may also be performed on an under-layer formed on thesubstrate as disclosed in more detail below, and the term “substratesurface” is intended to include such under-layer as the contextindicates. Thus for example, where a film/layer or partial film/layerhas been deposited onto a substrate surface, the exposed surface of thenewly deposited film/layer becomes the substrate surface.

As used in this specification and the appended claims, the terms“precursor”, “reactant”, “reactive gas” and the like are usedinterchangeably to refer to any gaseous species that can react with thesubstrate surface.

One or more embodiments of the disclosure are directed to integrationschemes for DRAM shallow trench isolation (STI) active-cut that uses amulti-color approach. As used in this manner, the term “multi-color”refers to multiple films that are etch selective to each other. Someembodiments of the disclosure advantageously provide improved shallowtrench isolation area (Active Area) by ˜25%. Some embodimentsadvantageously provide methods with increased margin for buried wordlinepatterning. One or more embodiments of the disclosure provide newgapfill materials (carbon based) for active area patterning and a novelself-aligned double patterning process using multi-color approach toachieve high active area.

Some embodiments of the disclosure are directed to integration schemesthat use self-aligned quadruple patterning (SAQP) for active areapatterning using gapfill materials and cross self-aligned doublepatterning (X-SADP) using a multi-color approach. SAQP with gapfillapproach benefits from 1:1 selectivity to spin-on materials. This can beachieved by, for example, H₂/N₂ plasma. Some embodiments, for example,for X-SADP use a multi-color approach where Material A is selective toMaterial B and Material C. Some embodiments of the disclosure provide aspacer-on-spacer scheme for active area patterning that reduces thenumber of patterning steps and cost. Some embodiments providespacer-on-spacer schemes for active cut patterning that reduces thenumber of patterning steps and cost. Some embodiments of the disclosureincrease the Active Area by greater than or equal to about 10%, 15%, 20%or 25%.

In some embodiments, the multi-color film is selected from one or moreof high sp3 carbon (C), spin-on-carbon (SOC), silicon boride (SiB),physical vapor deposition (PVD) silicon nitride (SiN), low temperatureoxide (LTO). In some embodiments, one or more of the multicolor filmshave an etch selectivity of >10:1 relative to other films present.

In the following description, numerous specific details, such asspecific materials, chemistries, dimensions of the elements, etc. areset forth in order to provide thorough understanding of one or more ofthe embodiments of the present disclosure. It will be apparent, however,to one of ordinary skill in the art that the one or more embodiments ofthe present disclosure may be practiced without these specific details.In other instances, semiconductor fabrication processes, techniques,materials, equipment, etc., have not been described in great details toavoid unnecessarily obscuring of this description. Those of ordinaryskill in the art, with the included description, will be able toimplement appropriate functionality without undue experimentation.

While certain exemplary embodiments of the disclosure are described andshown in the accompanying drawings, it is to be understood that suchembodiments are merely illustrative and not restrictive of the currentdisclosure, and that this disclosure is not restricted to the specificconstructions and arrangements shown and described because modificationsmay occur to those ordinarily skilled in the art.

Reference throughout the specification to “one embodiment”, “anotherembodiment”, or “an embodiment” means that a particular feature,structure, or characteristic described in connection with the embodimentis included in a least one embodiment of the present disclosure. Thus,the appearance of the phrases “in one embodiment” or “in an embodiment”in various places throughout the specification are not necessarily allreferring to the same embodiment of the disclosure. Furthermore, theparticular features, structures, or characteristics may be combined inany suitable manner in one or more embodiments.

Referring to FIGS. 1A through 22D illustrate a process in accordancewith one or more embodiment of the disclosure. The skilled artisan willrecognize that the embodiment illustrated is merely exemplary of onepossible method and that variation and modifications are within thescope of the disclosure. Additionally, the skilled artisan willrecognize that the method can begin with any of the illustratedelectronic devices. For example, the method may begin with theelectronic device depicted in FIGS. 6A and 6B where a device similar tothe described embodiment is provided for further processing.

The illustrations presented in FIGS. 1A through 11B illustrate an activearea portion of the method in accordance with one or more embodiment ofthe disclosure. In each of these Figures, the ‘A’ figure (e.g., FIG. 1A)provide an isometric view of an electronic device structure and the ‘B’figure (e.g., FIG. 1B) provides a view of a front view of the electronicdevice structure of the respective ‘A’ figure taken along the x-z plane,with the y-axis extending normal to the page of the illustrations. Thecoordinate axes for FIGS. 1A through 11B are only shown in FIGS. 1A and1B; however, the skilled artisan will recognize that the coordinate axesfor each of the ‘A’ figures and ‘B’ figures of FIGS. 2A through 11B areshown in FIGS. 1A and 1B, respectively.

FIG. 1A illustrates an isometric view 100 of an electronic devicestructure according to one embodiment. FIG. 1B is a front view 110 ofthe electronic device depicted in FIG. 1A. A substrate 101 has a spacermaterial 102 with an anti-reflective coating (ARC) 103 thereon. In anembodiment, the substrate 101 comprises a semiconductor material, e.g.,silicon (Si), carbon (C), germanium (Ge), silicon germanium (SiGe),gallium arsenide (GaAs), indium phosphide (InP), indium gallium arsenide(InGaAs), aluminum indium arsenide (InAlAs), other semiconductormaterial, or any combination thereof. In an embodiment, substrate 101 isa semiconductor-on-isolator (SOI) substrate including a bulk lowersubstrate, a middle insulation layer, and a top monocrystalline layer.The top monocrystalline layer may comprise any material listed above,e.g., silicon. In various embodiments, the substrate 101 can be, e.g.,an organic, a ceramic, a glass, or a semiconductor substrate. Although afew examples of materials from which the substrate 101 may be formed aredescribed here, any material that may serve as a foundation upon whichpassive and active electronic devices (e.g., transistors, memories,capacitors, inductors, resistors, switches, integrated circuits,amplifiers, optoelectronic devices, or any other electronic devices) maybe built falls within the spirit and scope of the present disclosure.

The spacer material 102 of some embodiments comprises spin-on-carbon(SOC). The anti-reflective coating 103 of some embodiments comprises asilicon ARC. The width of the spacer material 102 and the ARC 103 can beany suitable width depending on the target width of the final structuresand multi-patterning operations have been performed.

The spacer material 102 and ARC 103 can be formed by any suitableprocess known to the skilled artisan. In an embodiment, spacer material102 and/or ARC 103 is/are deposited independently using one ofdeposition techniques, such as but not limited to a chemical vapordeposition (“CVD”), a physical vapor deposition (“PVD”), molecular beamepitaxy (“MBE”), metalorganic chemical vapor deposition (“MOCVD”),atomic layer deposition (“ALD”), spin-on, or other insulating depositiontechniques known to one of ordinary skill in the art of microelectronicdevice manufacturing.

FIG. 2A is a view 200 similar to isometric view 100 of FIG. 1A, afterconformal deposition of a first spacer material 201 on the stack ofspacer material 102 and ARC 103 according to one embodiment. FIG. 2B isa front view 210 of the electronic device depicted in FIG. 2A.

The first spacer material 201 of some embodiments comprises a boridefilm. In some embodiments, the first spacer material 201 comprises orconsists essentially of or consists of silicon boride. As used in thismanner, the term “consists essentially of” means that the specified filmor material is greater than or equal to about 95%, 98%, 99% or 99.5% ofthe stated material.

The first spacer material 201 can be deposited by any suitable conformaldeposition technique known to the skilled artisan. For example, thefirst spacer material 201 can be deposited by ALD or CVD processes.

FIG. 3A is a view 300 similar to isometric view 200 of FIG. 2A, afteretching of first spacer material 201 and ARC 103 according to oneembodiment. FIG. 3B is a front view 310 of the electronic devicedepicted in FIG. 3A. Removal of portions of the first spacer material201 and ARC 103 results in the formation of a plurality of first lines301 comprising the first spacer material. The first lines 301 extend ina first direction. The Figures illustrate the first direction as alongthe extending along the Y-axis. The top surface 302 of the first lines301 and the top surface 104 of the ARC 103 are exposed by the removalprocess. The first spacer material 201 and ARC 103 can be removed by anysuitable process known to the skilled artisan. In some embodiments, thefirst spacer material 201 and ARC 103 are removed by a selective etchprocess in which the etchant selectively removes the top of the firstspacer material 201 and ARC 103 in a controlled manner to leave thefirst lines 301 of the first material.

FIG. 4A is a view 400 similar to isometric view 300 of FIG. 3A, afterremoval of the spacer material 102 according to one embodiment. FIG. 4Bis a front view 410 of the electronic device depicted in FIG. 4A. Theprocess illustrated in FIGS. 4A and 4B may be referred to as a mandrelpull out process. Removal of the spacer material 102 leaves a topsurface 105 of the substrate 101 exposed between the first lines 301.

The spacer material 102 can be removed by any suitable processincluding, but not limited to, selective etch or ash processes in whichthe process selectively removes the spacer 102 relative to the firstlines 301. In some embodiments, the spacer material 102 comprisesspin-on-carbon and the first lines 301 comprise silicon boride and theetchant is selective for the spin-on-carbon leaving the first lines ofsilicon boride.

FIG. 5A is a view 500 similar to isometric view 400 of FIG. 4A, after aspacer material 501 is conformally deposited on the first lines 301according to one or more embodiment. FIG. 5B is a front view 510 of theelectronic device depicted in FIG. 5A. This process may also be referredto as spacer-on-spacer deposition. The second spacer material 501 can beany suitable composition including, but not limited to, a lowtemperature oxide film. In some embodiments, the second spacer material501 is deposited by one or more of an ALD or CVD process.

FIG. 6A is a view 600 similar to isometric view 500 of FIG. 5A, afterperforming a second spacer etch according to one or more embodiment.FIG. 6B is a front view 610 of the electronic device depicted in FIG.6A. The second spacer material 501 is etched to remove the second spacermaterial 501 from the top surface 302 of the first lines 301 and fromthe substrate 101 to expose a portion of the substrate surface 105. Thesecond spacer etch forms a plurality of second lines 601 of a secondspacer material that extend along the first direction. The second lines601 are arranged on either side of the each of the first lines 301 andadjacent second lines 601 are spaced to form a trench 602 between linesin which the substrate surface 105 is exposed.

FIG. 7A is a view 700 similar to isometric view 600 of FIG. 6A, afterperforming a gapfill process according to one or more embodiment. FIG.7B is a front view 710 of the electronic device of FIG. 7A. The gapfillprocess deposits a carbon material 701 that can fill the trench 602 withcarbon gapfill material 703 to form a carbon line that extends along thefirst direction between the adjacent second lines 601. An overburdencarbon material 704 can be formed on the top surfaces of the first lines301 and second lines 601. In some embodiments, the gapfill process fillsthe trench 602 and forms an overburden material 703.

The gapfill process can be a conformal gapfill process, a bottom-up gapfill process or a non-conformal gapfill process. In some embodiments,the gap fill process uses a flowable film to fill the trench 602. In theillustrated embodiment, the gapfill process forms the carbon gapfillmaterial 703 and overburden carbon material 704 in a conformal processthat results in the formation of an opening 702 in the carbon material701. The opening 702 in the carbon material 701 is aligned with thetrench 602 that has been filled with carbon gapfill material 703. Theopening 702 in the overburden carbon material 704 can be the same widthas the trench 602 or can be narrower, as illustrated.

The carbon material 701 of some embodiments is a diamond-like carbonmaterial. For diamond-like carbon materials, the bulk properties soughtin the gapfill may include, without limitation, high density and modulus(e.g., higher sp3 content, more diamond-like) and low stress (e.g.,<−500 MPa). Some embodiments of diamond-like carbon films have one ormore of high density (e.g., >1.8 g/cc), high modulus (e.g., >150 GPa)and/or low stress (e.g., <−500 MPa). The carbon material 701 accordingto some embodiments has a low stress and high sp3 carbon content.

In some embodiments, the carbon material 701 described herein may beformed by chemical vapor deposition (plasma enhanced and/or thermal)processes using a gapfill precursor. In some embodiments, the gapfillprecursor comprises a hydrocarbon and the gapfill comprises adiamond-like carbon material. In some embodiments, the hydrocarbon isselected from a group consisting of: C₂H₂, C₃H₆, CH₄, C₄H₈,1,3-dimethyladamantane, bicyclo[2.2.1]hepta-2,5-diene(2,5-Norbornadiene), adamantine (C₁₀H₁₆), norbornene (C₇H₁₀), orcombinations thereof.

The deposition of the carbon material 701 may be carried out attemperatures ranging from −50 degrees Celsius to 600 degrees Celsius.The deposition process may be carried out in a processing volume atpressures ranging from 0.1 mTorr to 10 Torr. The gapfill precursor mayfurther include any one of, or a combination of any of He, Ar, Xe, N₂,H₂.

In some embodiments, the carbon material 701 precursor may furthercomprise etchant gases such as Cl₂, CF₄, NF₃ to improve film quality.The plasma (e.g., capacitive-coupled plasma) may be formed from eithertop and bottom electrodes or side electrodes. The electrodes may beformed from a single powered electrode, dual powered electrodes, or moreelectrodes with multiple frequencies such as, but not limited to, 350kHz, 2 MHz, 13.56 MHz, 27 MHz, 40 MHz, 60 MHz and 100 MHz, being usedalternatively or simultaneously in a CVD system with any or all of thereactant gases listed herein to deposit a gapfill material in a featureof a substrate.

In some embodiments, hydrogen radicals are fed through a remote plasmasource (RPS) during carbon material 701 deposition. The RPS hydrogenradicals can selectively etch sp2 hybridized carbon atoms, increasingthe sp3 hybridized carbon atom fraction of the carbon material 701.

FIG. 8A is a view 800 similar to isometric view 700 of FIG. 7A, afterdepositing a spin-on-carbon (SOC) layer 801 on the carbon material 701according to one or more embodiment. FIG. 8B is a front view 810 of theelectronic device of FIG. 8A. The SOC layer 801 can be deposited by anysuitable technique known to the skilled artisan, including, but notlimited to, bulk deposition, conformal deposition, flowable filmdeposition. The SOC layer 801 fills the opening 702 with carbon material802 and covers the carbon material in the filled trench and theoverburden carbon material.

FIG. 9A is a view 900 similar to isometric view 800 of FIG. 8A, afterremoval of the overburden carbon material and the SOC layer 801according to one or more embodiment. FIG. 9B is a front view 910 of theelectronic device of FIG. 9A. The SOC layer 801 and the overburdencarbon material 701 can be removed by any suitable technique. In someembodiments, the SOC layer 801 and the overburden carbon material 701are removed by an etch process that is 1:1 selective. As used in thismanner, the term “1:1 selective” means that the etch process removessubstantially equal amounts of the SOC layer 801 and the overburdencarbon material 701 per unit time. As used in this manner,“substantially equal amounts” means that for any amount (e.g.,thickness) of SOC layer 801 removed by the etch process, the amount ofthe overburden carbon material 701 removed at the same time is the rangeof about 90% to about 110% of the amount of the SOC layer 801 removed.In some embodiments, the overburden carbon material 701 and SOC layer801 are etched with an H₂/N₂ plasma or by a CF₄/O₂ plasma. In someembodiments, the overburden material 701 comprises spin-on-carbon andthe selective etch is performed using a plasma mixture of molecularhydrogen (H₂) and molecular nitrogen (N₂). In some embodiments, theoverburden material 701 comprises a silicon anti-reflective coating(SiARC) and the selective etch is performed using a plasma mixture ofcarbon tetrafluoride (CF₄) and molecular oxygen (O₂). In someembodiments, the SOC layer 801 and overburden carbon material 701 areremoved by a chemical-mechanical planarization (CMP) process. Afterremoval, the substrate 101 has first lines 301, second lines 601 andcarbon gapfill material 703 forming a line; all of which extend alongthe first direction.

FIG. 10A is a view 1000 similar to isometric view 900 of FIG. 9A, afterdeposition of an oxide layer 1001 according to one or more embodiment.FIG. 10B is a front view 1010 of the electronic device of FIG. 10A. Theoxide layer 1001 of some embodiments comprises a silicon oxide film or adielectric material. The oxide layer 1001 can be deposited by anysuitable technique known to the skilled artisan.

FIG. 11A is a view 1100 similar to isometric view 1000 of FIG. 10A,after deposition of a nitride layer 1101 according to one or moreembodiment. FIG. 10B is a front view 1110 of the electronic device ofFIG. 11A. The nitride layer 1101 of some embodiments comprises a siliconnitride film. The nitride layer 1101 can be deposited by any suitabletechnique known to the skilled artisan.

The process of FIGS. 1A through 11B continue in FIGS. 12A through 22D.For illustrative purposes, the electronic device structure illustratedin the FIGS. 1A through 11B are turned 90° around the z-axis in FIGS.12A through 22D. The first direction that the first lines 301, secondlines 601 and carbon material lines 703 still extends along the lengthof the y-axis. For FIGS. 12A through 22D, each of the ‘A’ figuresillustrates an isometric view of the electronic device, each of the ‘B’figures illustrates a slice of the electronic device of thecorresponding ‘A’ figure at the front portion of the illustratedisometric view taken along the y-z plane, each of the ‘C’ figuresillustrates a slice of the electronic device of the corresponding ‘A’figure taken along the y-z plane along line C-C, and each of the ‘D’figures illustrates a slice of the electronic device of thecorresponding ‘A’ figure taken along the y-z plane along line D-D. Theslices illustrated in the ‘B’, ‘C’ and ‘D’ figures are notcross-sectional views; the portions of the electronic device behind andin front of the illustrated plane are not shown. The slices illustratedin the ‘B’ figures show the device taken along the second lines 601. Theslices illustrated in the ‘C’ figures show the device taken along thefirst line 301. The slices illustrated in the ‘D’ figures who the devicetaken along the carbon material lines 703.

FIG. 12A illustrates a view 1200 of an electronic device structuresimilar to FIG. 11A with the device rotated around the z-axis by 90°. Insome embodiments, the method begins with the device illustrated in FIGS.12A-12D. A substrate similar to that of FIG. 12A can be provided forprocessing. The substrate of some embodiments comprises a plurality offirst lines 301 extending along a first direction, a plurality of carbonmaterial lines 703 extending along the first direction and a pluralityof second lines 601 extending along the first direction. Each of thefirst lines 301 have a second line 601 on either side thereof. The firstlines 301 and adjacent carbon material lines 703 are separated by asecond line 601. On oxide layer 1001 is on the first lines 301, secondlines 601 and carbon material lines 703. A plurality of third lines 1201extending along a second direction different than the first direction ison the oxide layer 1001. The third lines 1201 are spaced apart to formtrenches 1203 between adjacent third lines.

FIG. 13A is a view 1300 similar to isometric view 1200 of FIG. 12A,after performing a spacer deposition process to fill the trench 1203between adjacent third lines 1201 with a fourth spacer material 1301.FIG. 13B is a view 1310 showing the front of FIG. 13A. FIG. 13C is aview 1320 showing a slice taken in the y-z plane along line C-C of FIG.13A. FIG. 13D is a view 1330 showing a slice taken in the y-z planealong line D-D of FIG. 13A. The process illustrated is similar to and ina direction perpendicular to that of FIG. 2A.

The spacer deposition process forms a film of a fourth spacer material1301 that covers the top 1202 of the third lines and the top surface1102 of the oxide layer 1001. The fourth spacer material 1301 has a gap1302 formed between the third lines 1201.

The fourth spacer material 1301 can be any suitable spacer material thatis etch selective relative to the third spacer material. In someembodiments, the fourth spacer material comprises a boride film. In oneor more embodiments, the fourth spacer material 1301 comprises, consistsessentially of, or consists of silicon boride.

FIG. 14A is a view 1400 similar to isometric view 1300 of FIG. 13A,after removing portions of the fourth spacer material 1301 to provide aplurality of fourth lines 1401 of the fourth spacer material. FIG. 14Bis a view 1410 showing the front of FIG. 14A. FIG. 14C is a view 1420showing a slice taken in the y-z plane along line C-C of FIG. 14A. FIG.14D is a view 1430 showing a slice taken in the y-z plane along line D-Dof FIG. 14A. After removal of the portions of the fourth spacer material1301, a plurality of fourth lines 1401 are formed adjacent to and oneither side of each of the plurality of third lines 1201 exposing thetop 1202 of the third liner 1201 and leaves an opening 1402 betweenadjacent fourth lines 1301. Removing the portions of the fourth spacermaterial 1301 can be done by any suitable process. In some embodiments,removing the portions of the fourth spacer material 1301 is done by anetch process.

FIG. 15A is a view 1500 similar to isometric view 1400 of FIG. 14A,after a first cut etch process according to one or more embodiment. FIG.15B is a view 1510 showing the front of FIG. 15A. FIG. 15C is a view1520 showing a slice taken in the y-z plane along the line C-C of FIG.15A. FIG. 15D is a view 1530 showing a slice taken in the y-z planealong the line D-D of FIG. 15A.

The first cut etch process removes the oxide layer 1001 and portions ofthe second lines 601 and carbon material lines 703 under the oxide layer1001 through opening 1402. FIGS. 15B and 15D, respectively, show theremoval of the second lines 601 and the carbon material lines 703exposing the substrate surface 105. This process is etch selectiverelative to the first lines 301, as shown in FIG. 15C, so that the firstlines 301 are substantially unaffected by the etch and the top surface302 remains. The first cut etch process can be done by any suitabletechnique known to the skilled artisan.

In some embodiments, the films etched by the first cut etch processcomprise one or more of silicon oxide or low temperature oxide. In someembodiments, the films unaffected by the first cut etch process compriseone or more of silicon nitride, (CVD or PVD) or silicon bromide.

FIG. 16A is a view 1600 similar to isometric view 1500 of FIG. 15A,after deposition of a spin-on material 1601 according to one or moreembodiment. FIG. 16B is a view 1610 showing the front of FIG. 16A. FIG.16C is a view 1620 showing a slice taken in the y-z plane along the lineC-C of FIG. 16A. FIG. 16D is a view 1630 showing a slice taken in they-z plane along the line D-D of FIG. 16A.

The spin-on material 1601 fills the opening 1501 formed in the first cutetch process to fill spaces created by removal of the portions of thesecond lines 601 and carbon material lines 703. In the embodimentillustrated in FIG. 16A-D, the spin-on material 1601 forms an overburden1602 on top of the third lines 1201 and fourth lines 1401.

The spin-on material 1601 can be any suitable material deposited by anysuitable technique known to the skilled artisan. In some embodiments,the spin-on material 1601 comprises a spin-on carbon film.

In some embodiments, deposition of the spin-on material 1601 leaves thetop surface 1202 of the third lines 1201 and the top surface 1403 of thefourth lines 1401 exposed. In embodiments in which an overburden 1602 isformed, the overburden is removed in an etch back process. FIG. 17A is aview 1700 similar to isometric view 1600 of FIG. 16A, after an etch backprocess according to one or more embodiment. FIG. 17B is a view 1710showing the front of FIG. 17A. FIG. 17C is a view 1720 showing a slicetaken in the y-z plane along the line C-C of FIG. 17A. FIG. 17D is aview 1730 showing a slice taken in the y-z plane along the line D-D ofFIG. 17A.

The etch back process can be any suitable process. In some embodiments,the etch back process is a selective etch process that removes thespin-on material 1601 without affecting the third lines 1201 or fourthlines 1401. In some embodiments, the etch back process comprises anashing process, as will be understood by the skilled artisan, leaving atop surface 1701 of the spin-on material 1601 level or slightly belowthe top surface 1202 of the third lines 1201 and top surface 1403 of thefourth lines 1401 exposed.

FIG. 18 is a view 1800 similar to isometric view 1700 of FIG. 17A, aftera mandrel pull-out process according to one or more embodiment. FIG. 18Bis a view 1810 showing the front of FIG. 18A. FIG. 18C is a view 1820showing a slice taken in the y-z plane along the line C-C of FIG. 18A.FIG. 18D is a view 1830 showing a slice taken in the y-z plane along theline D-D of FIG. 18A.

The mandrel pull-out process selectively removes the third lines 1201 toexpose the top surface 1102 of the oxide layer 1001 through opening1801. The mandrel pull-out process of some embodiments is etch selectiveto the third lines 1201. In some embodiments, the third lines comprisesilicon nitride. In some embodiments, the films remaining after pull-outcomprise one or more of a boride (e.g., silicon boride), a spin-onmaterial (e.g., spin-on-carbon) or an oxide (e.g., silicon oxide).

FIG. 19 is a view 1900 similar to isometric view 1800 of FIG. 18A, afteran oxide etch process according to one or more embodiment. FIG. 19B is aview 1910 showing the front of FIG. 19A. FIG. 19C is a view 1920 showinga slice taken in the y-z plane along the line C-C of FIG. 19A. FIG. 19Dis a view 1930 showing a slice taken in the y-z plane along the line D-Dof FIG. 19A.

The oxide etch process removes the oxide layer 1001 through openings1801 formed in the mandrel pull-out. Removal of the oxide layer 1001exposes the top surface 603 of the second lines 601 (FIG. 19B), the topsurface 302 of the first lines 301 (FIG. 19C) and the top surface 705 ofthe carbon material lines 703 (FIG. 19D).

The oxide removal can be performed by any suitable process known to theskilled artisan. In some embodiments, the oxide film is one or more of asilicon oxide or a low temperature oxide material. In some embodiments,the films remaining after the oxide etch (i.e., the selective films)comprise one or more of a boride (e.g., silicon boride), a spin-onmaterial (e.g., spin-on-carbon), a nitride (e.g., silicon nitride) or adifferent low temperature oxide.

FIG. 20 is a view 2000 similar to isometric view 1900 of FIG. 19A, afterremoval of the fourth lines 1401 according to one or more embodiment.FIG. 20B is a view 2010 showing the front of FIG. 20A. FIG. 20C is aview 2020 showing a slice taken in the y-z plane along the line C-C ofFIG. 20A. FIG. 20D is a view 2030 showing a slice taken in the y-z planealong the line D-D of FIG. 20A.

Removal of the fourth lines 1401 exposes the top surface 1202 of thethird lines 1201. In some embodiments, the fourth lines 1401 are removedby a chemical-mechanical planarization process so that the top surface1701 of the spin-on material 1601 remains level with the top surface1202 of the third lines 1201. In some embodiments, as shown in FIG. 20C,the top surface 105 of the substrate 101 is exposed through the opening2001.

FIG. 21 is a view 2100 similar to isometric view 2000 of FIG. 20A, afterremoval of the spin-on material 1601 according to one or moreembodiment. FIG. 21B is a view 2110 showing the front of FIG. 21A. FIG.21C is a view 2120 showing a slice taken in the y-z plane along the lineC-C of FIG. 21A. FIG. 21D is a view 2130 showing a slice taken in they-z plane along the line D-D of FIG. 21A.

Removal of the spin-on material 1601 exposes the surface 105 of thesubstrate 101 through opening 2101. As can be seen in the slice views,the surface 105 of the substrate 101 can be exposed through alternatingopenings. The surface 105 of the substrate 101 is exposed throughopening 2001 in first lines 301 and through opening 2101 in carbonmaterial lines 703 and second lines 601.

The removal process can be any suitable process known to the skilledartisan. In some embodiments, the removal process comprises an ashingprocess that removes the spin-on material 1601 without affecting theother materials.

FIG. 22 is a view 2200 similar to isometric view 2100 of FIG. 21A, afterremoval of the oxide layer according to one or more embodiment. FIG. 22Bis a view 2210 showing the front of FIG. 22A. FIG. 22C is a view 2220showing a slice taken in the y-z plane along the line C-C of FIG. 22A.FIG. 22D is a view 2230 showing a slice taken in the y-z plane along theline D-D of FIG. 22A.

The oxide layer 1001 can be removed by any suitable technique known tothe skilled artisan. In some embodiments, the oxide layer 1001 isremoved by a CMP process. In some embodiments, the oxide layer 1001 isremoved by a selective etch process that is selective for the oxidelayer 1001 relative to one or more of a boride material, spin-onmaterial or nitride material.

Removal of the oxide layer 1001 can also remove the second lines 601 atthe same time. In some embodiments, the second lines 601 are removed ina separate process than the removal of the oxide layer 1001. The removalof the oxide layer 1001 and second lines 601 provides a substrate 101with a patterned first line 2201 and a patterned carbon material line2202.

With reference to FIG. 23, additional embodiments of the disclosure aredirected to processing tools 2300 for executing the methods describedherein. FIG. 23 illustrates a system 2300 that can be used to process asubstrate according to one or more embodiment of the disclosure. Thesystem 2300 can be referred to as a cluster tool. The system 2300includes a central transfer station 2310 with a robot 2312 therein. Therobot 2312 is illustrated as a single blade robot; however, thoseskilled in the art will recognize that other robot 2312 configurationsare within the scope of the disclosure. The robot 2312 is configured tomove one or more substrate between chambers connected to the centraltransfer station 2310.

At least one pre-clean/buffer chamber 2320 is connected to the centraltransfer station 2310. The pre-clean/buffer chamber 2320 can include oneor more of a heater, a radical source or plasma source. Thepre-clean/buffer chamber 2320 can be used as a holding area for anindividual semiconductor substrate or for a cassette of wafers forprocessing. The pre-clean/buffer chamber 2320 can perform pre-cleaningprocesses or can pre-heat the substrate for processing or can simply bea staging area for the process sequence. In some embodiments, there aretwo pre-clean/buffer chambers 2320 connected to the central transferstation 2310.

In the embodiment shown in FIG. 23, the pre-clean chambers 2320 can actas pass through chambers between the factory interface 2305 and thecentral transfer station 2310. The factory interface 2305 can includeone or more robot 2306 to move substrate from a cassette to thepre-clean/buffer chamber 2320. The robot 2312 can then move thesubstrate from the pre-clean/buffer chamber 2320 to other chamberswithin the system 2300.

A first processing chamber 2330 can be connected to the central transferstation 2310. The first processing chamber 2330 can be configured as anetching chamber and may be in fluid communication with one or morereactive gas sources to provide one or more flows of reactive gases tothe first processing chamber 2330. The substrate can be moved to andfrom the processing chamber 2330 by the robot 2312 passing throughisolation valve 2314.

Processing chamber 2340 can also be connected to the central transferstation 2310. In some embodiments, processing chamber 2340 comprises adeposition chamber and is fluid communication with one or more reactivegas sources to provide flows of reactive gas to the processing chamber2340 to perform one or more deposition processes. The substrate can bemoved to and from the deposition chamber 2340 by robot 2312 passingthrough isolation valve 2314. The number and type of depositionschambers 2340 can vary depending on the particular process beingperformed. In some embodiments, the deposition chambers are selectedfrom one or more of atomic layer deposition chambers, chemical vapordeposition chambers, epitaxial growth chambers or physical vapordeposition chambers.

Processing chamber 2345 can also be connected to the central transferstation 2310. In some embodiments, the processing chamber 2345 is thesame type of processing chamber 2340 configured to perform the sameprocess as processing chamber 2340. This arrangement might be usefulwhere the process occurring in processing chamber 2340 takes much longerthan the process in processing chamber 2330.

In some embodiments, processing chamber 2360 is connected to the centraltransfer station 2310 and is configured to act as a selective etchprocessing chamber. The processing chamber 2360 can be configured toperform one or more different selective etching processes.

In some embodiments, each of the processing chambers 2330, 2340, 2345and 2360 are configured to perform different portions of the processingmethod. The skilled artisan will recognize that the number andarrangement of individual processing chamber on the tool can be variedand that the embodiment illustrated in FIG. 23 is merely representativeof one possible configuration.

At least one controller 2350 is coupled to one or more of the centraltransfer station 2310, the pre-clean/buffer chamber 2320, processingchambers 2330, 2340, 2345, or 2360. In some embodiments, there are morethan one controller 2350 connected to the individual chambers orstations and a primary control processor is coupled to each of theseparate processors to control the system 2300. The controller 2350 maybe one of any form of general-purpose computer processor,microcontroller, microprocessor, etc., that can be used in an industrialsetting for controlling various chambers and sub-processors.

The at least one controller 2350 can have a processor 2352, a memory2354 coupled to the processor 2352, input/output devices 2356 coupled tothe processor 2352, and support circuits 2358 to communication betweenthe different electronic components. The memory 2354 can include one ormore of transitory memory (e.g., random access memory) andnon-transitory memory (e.g., storage).

The memory 2354, or computer-readable medium, of the processor may beone or more of readily available memory such as random access memory(RAM), read-only memory (ROM), floppy disk, hard disk, or any other formof digital storage, local or remote. The memory 2354 can retain aninstruction set that is operable by the processor 2352 to controlparameters and components of the system 2300. The support circuits 2358are coupled to the processor 2352 for supporting the processor in aconventional manner. Circuits may include, for example, cache, powersupplies, clock circuits, input/output circuitry, subsystems, and thelike.

Processes may generally be stored in the memory as a software routinethat, when executed by the processor, causes the process chamber toperform processes of the present disclosure. The software routine mayalso be stored and/or executed by a second processor (not shown) that isremotely located from the hardware being controlled by the processor.Some or all of the method of the present disclosure may also beperformed in hardware. As such, the process may be implemented insoftware and executed using a computer system, in hardware as, e.g., anapplication specific integrated circuit or other type of hardwareimplementation, or as a combination of software and hardware. Thesoftware routine, when executed by the processor, transforms the generalpurpose computer into a specific purpose computer (controller) thatcontrols the chamber operation such that the processes are performed.

In some embodiments, the controller 2350 has one or more configurationsto execute individual processes or sub-processes to perform the method.The controller 2350 can be connected to and configured to operateintermediate components to perform the functions of the methods. Forexample, the controller 2350 can be connected to and configured tocontrol one or more of gas valves, actuators, motors, slit valves,vacuum control, etc.

The controller 2350 of some embodiments has one or more configurationsselected from: a configuration to move a substrate on the robot betweenthe plurality of processing chambers; a configuration to perform mandrelpull-out process; a configuration to perform a conformal depositionprocess; a configuration to perform an isotropic etch process; aconfiguration to perform an anisotropic etch process; a configuration toperform a gapfill process; a configuration to perform a spin-ondeposition process; a configuration to perform an etchback process; aconfiguration to perform an oxide layer deposition process; aconfiguration to perform a nitride layer deposition process; aconfiguration to perform a spacer deposition process; a configuration toperform a spacer etch process; a configuration to perform a first cutprocess; a configuration to perform a mandrel pull-out process for thethird lines; a configuration to perform an oxide etch process; aconfiguration to perform a spin-on material etch process; aconfiguration to perform a boride film etch process; a configuration toperform an ashing process and/or a configuration to perform an oxideremoval process.

In the foregoing specification, embodiments of the disclosure have beendescribed with reference to specific exemplary embodiments thereof. Itwill be evident that various modifications may be made thereto withoutdeparting from the broader spirit and scope of the embodiments of thedisclosure as set forth in the following claims. The specification anddrawings are, accordingly, to be regarded in an illustrative senserather than a restrictive sense.

What is claimed is:
 1. A method of forming an electronic device, themethod comprising: forming a carbon gapfill material between a pluralityof first lines and a plurality of second lines, the plurality of firstlines comprising a first spacer material extending along a firstdirection, the plurality of second lines comprising a second spacermaterial extending along the first direction, the second lines arrangedon either side of the plurality of first lines with the carbon gapfillmaterial between the first lines and second lines; forming an oxidelayer on a top surface of the first spacer material, the second spacermaterial and the carbon gapfill material; forming a plurality of spacedthird lines of a third spacer material in a second direction differentfrom the first direction so that the third spacer lines cross the firstspacer lines and the carbon gapfill material; and forming lines offourth spacer material on either side of the spaced third material linesleaving a trench between adjacent fourth spacer material lines exposinga top surface of the oxide layer, the trench extending along the seconddirection.
 2. The method of claim 1, wherein forming the carbon gapfillmaterial comprises depositing a flowable film to fill the trench withcarbon gapfill material.
 3. The method of claim 1, wherein forming thecarbon gapfill material comprises a conformal gapfill process to fill atrench between the first spacer material and second spacer material withthe carbon gapfill material and form a carbon line extending along thefirst direction and an overburden carbon material with an openingaligned with the carbon gapfill material in the filled trench.
 4. Themethod of claim 3, further comprising filling the opening in theoverburden carbon material with a spin-on-carbon (SOC) layer.
 5. Themethod of claim 4, further comprising removing the SOC layer and theoverburden carbon material to expose a top surface of the first spacermaterial, the second spacer material and the carbon gapfill material. 6.The method of claim 5, wherein the carbon material comprises adiamond-like carbon.
 7. The method of claim 6, wherein the diamond-likecarbon has one or more of a stress less than or equal to −500 MPa, adensity greater than or equal to 1.8 g/cc or modulus greater than orequal to 150 GPa.
 8. The method of claim 6, wherein the carbon materialis formed by a chemical vapor deposition or plasma-enhanced chemicalvapor deposition process using a gapfill precursor.
 9. The method ofclaim 8, wherein the gapfill precursor comprises a hydrocarbon.
 10. Themethod of claim 9, wherein the hydrocarbon is selected from a groupconsisting of: C₂H₂, C₃H₆, CH₄, C₄H₈, 1,3-dimethyladamantane,bicyclo[2.2.1]hepta-2,5-diene (2,5-Norbornadiene), adamantine (C₁₀H₁₆),norbornene (C₇H₁₀), or combinations thereof.